Optimization of displacement Talbot lithography for fabrication of uniform high aspect ratio gratings

Abstract Displacement Talbot lithography can rapidly pattern periodic nanostructures with high depth of focus over large area. Imperfections in the phase mask profile and stage movement inaccuracies during exposure cause linewidth variation every second line binary gratings. While this beating is barely visible patterned photoresist, it leads to substantial when transferred into aspect ratio silicon structures, because micro-loading deep reactive ion etching. A proper scan range compensated defect, a beating-free grating pitch size 1 ? m 54:1 demonstrated.